MOS based nanocapacitor using C-AFM


Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

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Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Uncontrolled Keywords: AFM,Nanodevices,Nanofabrication,SPM,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Computer Science Applications,Applied Mathematics,Electrical and Electronic Engineering
Publication ISSN: 1996-756X
Last Modified: 08 Jan 2024 08:59
Date Deposited: 18 Feb 2019 15:20
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
https://www.spi ... /12.498556.full (Publisher URL)
PURE Output Type: Conference article
Published Date: 2003-04-29
Authors: Hill, Daniel (ORCID Profile 0000-0003-3510-7783)
Sadewasser, Sascha
Aymerich, Xavier



Version: Published Version

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