Numerical modelling of multilayer semiconductor devices: an investigation into reverse recovery voltage snap-off in snubber diodes

Abstract

The classic paper by Somos has shown how abrupt recovery occurred in alloyed semiconductor diodes, but had postulated that the commutation of diffused diodes may differ dramatically. This was confirmed by other workers. Diffused soft recovery diodes are now in general use. My investigations have shown that diodes can change their recovery characteristics and produce snap-off phenomena. Diode snap-off can be dangerous as it may lead to the destruction of the device and thus to circuit failures. Previously soft-recovery diodes were thought to be immune from this effect...

Publication DOI: https://doi.org/10.48780/publications.aston.ac.uk.00021705
Additional Information: Copyright © Peter T. Hoban, 1990. Peter T. Hoban asserts their moral right to be identified as the author of this thesis. This copy of the thesis has been supplied on condition that anyone who consults it is understood to recognise that its copyright rests with its author and that no quotation from the thesis and no information derived from it may be published without appropriate permission or acknowledgement. If you have discovered material in Aston Publications Explorer which is unlawful e.g. breaches copyright, (either yours or that of a third party) or any other law, including but not limited to those relating to patent, trademark, confidentiality, data protection, obscenity, defamation, libel, then please read our Takedown Policy and contact the service immediately.
Institution: Aston University
Uncontrolled Keywords: numerical modelling,transient analysis,high voltage snubber diodes,circuit simulations,diode reverse recovery snap-off
Last Modified: 10 Apr 2025 15:08
Date Deposited: 19 Mar 2014 17:20
Completed Date: 1990
Authors: Hoban, Peter Thomas

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