Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Abstract

Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

Publication DOI: https://doi.org/10.1063/5.0202834
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
College of Engineering & Physical Sciences
Funding Information: This work was supported by Innovate UK/Eurostars Project “BLOODLINE” (Grant No. 79455). B.C.K. is grateful for the support provided by the Engineering and Physical Sciences Research Council (RCUK Grant No. EP/L015323/1). A.F.M. is grateful for the support
Additional Information: This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Uncontrolled Keywords: Epitaxy,Photonic crystals,Quantum dots,Lasers,Semiconductors,Physics and Astronomy (miscellaneous)
Publication ISSN: 1077-3118
Data Access Statement: The data that support the findings of this study are available from<br/>the corresponding author upon reasonable request.
Last Modified: 27 Jun 2024 11:53
Date Deposited: 06 Jun 2024 13:16
Full Text Link:
Related URLs: https://pubs.ai ... hotonic-crystal (Publisher URL)
http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2024-05-27
Accepted Date: 2024-05-11
Authors: Kyaw, Aye S. M.
King, Ben C.
McKenzie, Adam F.
Bian, Zijun
Kim, Daehyun
Gerrard, Neil D.
Nishi, Kenichi
Takemasa, Keizo
Sugawara, Mitsuru
Childs, David T. D.
Hill, Calum H.
Taylor, Richard J. E.
Hogg, Richard A. (ORCID Profile 0000-0002-0781-6809)

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