Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films


A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na0.5Bi4.5Ti4O15 (NaBTi) and Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na0.5Bi4.5Ti4O15 thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field (P−E) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2Pr = 37.4 μC/cm2 and a low coercive electric field of 2Ec = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12×107 A/cm2 at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.

Publication DOI: https://doi.org/10.3938/NPSM.67.1272
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
College of Engineering & Physical Sciences
Additional Information: This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Full Text Link: http://www.scop ... tnerID=MN8TOARS
Related URLs: http://www.npsm ... =1272&year=2017 (Publisher URL)
PURE Output Type: Article
Published Date: 2017-11-30
Accepted Date: 2017-10-16
Authors: Kwak, M.H.
Raghavan, C.M. (ORCID Profile 0000-0003-3521-4255)
Kim, S.S.
Kim, W.-J.


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