Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions


In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 µm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm−1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > Aston Institute of Materials Research (AIMR)
Additional Information: © 2016, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Uncontrolled Keywords: defects,nanostructures,microwave plasma chemical vapour deposition processes,diamond,nanomaterials
Publication ISSN: 1873-5002
Last Modified: 04 Mar 2024 08:19
Date Deposited: 19 Aug 2019 10:09
Full Text Link:
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2016-12-14
Accepted Date: 2016-12-14
Submitted Date: 2016-09-30
Authors: Tang, C.J.
Hou, Haihong
Fernandes, A.J.S.
Jiang, X.F.
Pinto, J.L.
Ye, H. (ORCID Profile 0000-0002-4005-4922)

Export / Share Citation


Additional statistics for this record