Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures


In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.

Publication DOI: https://doi.org/10.1063/1.5083798
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Funding Information: E.U.R. acknowledges support from Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/R024898/1) and the Russian Science Foundation (Grant No. 18-15-00172). A.G. acknowledges support from the Russian Foundation for Basic Research (Rese
Additional Information: Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798
Uncontrolled Keywords: Physics and Astronomy(all)
Publication ISSN: 1089-7550
Last Modified: 15 Apr 2024 07:32
Date Deposited: 29 Apr 2019 07:52
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2019-04-21
Published Online Date: 2019-04-01
Accepted Date: 2019-03-15
Authors: Gorodetsky, Andrei
Bazieva, Natalia
Rafailov, Edik U. (ORCID Profile 0000-0002-4152-0120)



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