Stress-induced platelet formation in silicon:a molecular dynamics study


The effect of stress on vacancy cluster configurations in silicon is examined using molecular dynamics. At zero pressure, the shape and stability of the vacancy clusters agrees with previous atomistic results. When stress is applied the orientation of small planar clusters changes to reduce the strain energy. The preferred orientation for the vacancy clusters under stress agrees with the experimentally observed orientations of hydrogen platelets in the high stress regions of hydrogen implanted silicon. These results suggest a theory for hydrogen platelet formation.

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Divisions: College of Engineering & Physical Sciences > School of Engineering and Technology > Mechanical, Biomedical & Design
College of Engineering & Physical Sciences
Additional Information: ©2005 American Physical Society. Stress-induced platelet formation in silicon: A molecular dynamics study J. G. Swadener, M. I. Baskes, and M. Nastasi Phys. Rev. B 72, 201202(R) – Published 30 November 2005
Publication ISSN: 1550-235X
Last Modified: 04 Jan 2024 08:07
Date Deposited: 11 Mar 2019 18:23
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
http://link.aps ... sRevB.72.201202 (Publisher URL)
PURE Output Type: Article
Published Date: 2005-11-30
Authors: Swadener, J.G. (ORCID Profile 0000-0001-5493-3461)
Baskes, M.I.
Nastasi, M.



Version: Published Version

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