Electronic properties of homoepitaxial (111) highly boron-doped diamond films

Abstract

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.

Publication DOI: https://doi.org/10.1063/1.2837114
Additional Information: Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 103, 054503 (2008) and may be found at https://doi.org/10.1063/1.2837114
Uncontrolled Keywords: boron,diamond,doping profiles,elemental semiconductors,hole density,hopping conduction,semiconductor epitaxial layers,valence bands,Physics and Astronomy(all),Physics and Astronomy (miscellaneous)
Publication ISSN: 1089-7550
Last Modified: 19 Feb 2024 08:07
Date Deposited: 11 Mar 2019 17:47
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
http://link.aip ... ?jap/103/054503 (Publisher URL)
PURE Output Type: Article
Published Date: 2008-03-01
Authors: Ye, Haitao (ORCID Profile 0000-0002-4005-4922)
Tumilty, Niall
Bevilacqua, Mose
Jackman, Richard B
Curat, Stephane
Bergonzo, Philippe
Bazin, Bertrand

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