Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures


We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > School of Engineering and Technology > Mechanical, Biomedical & Design
College of Engineering & Physical Sciences
Additional Information: Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at
Uncontrolled Keywords: buried layers,channelling,cracks,elemental semiconductors,Ge-Si alloys,ion beam effects,ion implantation,Rutherford backscattering,semiconductor heterojunctions,silicon,stress relaxation,Physics and Astronomy (miscellaneous)
Publication ISSN: 1077-3118
Full Text Link:
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
https://aip.sci ... .1063/1.2838338 (Publisher URL)
PURE Output Type: Article
Published Date: 2008-02-11
Authors: Shao, Lin
Wang, Y.Q.
Swadener, J. Greg (ORCID Profile 0000-0001-5493-3461)
Nastasi, M.
Thompson, Phillip E.
Theodore, N. David



Version: Published Version

| Preview

Export / Share Citation


Additional statistics for this record