Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements


We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

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Divisions: College of Engineering & Physical Sciences > Systems analytics research institute (SARI)
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Publication ISSN: 2045-2322
Last Modified: 08 Jan 2024 08:54
Date Deposited: 26 Nov 2018 11:14
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Related URLs: https://www.nat ... 598-018-35210-z (Publisher URL)
PURE Output Type: Article
Published Date: 2018-11-21
Accepted Date: 2018-10-26
Authors: He, Wei
Wu, Rihan
Yurkevich, Igor V. (ORCID Profile 0000-0003-1447-8913)
Canham, Leigh T.
Kaplan, Andrey



Version: Published Version

License: Creative Commons Attribution

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