InGaN/GaN Laser Diodes and their Applications


Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
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Event Title: 20th Anniversary International Conference on Transparent Optical Networks (ICTON 2018)
Event Type: Other
Event Location: Library of University Politehnica Bucharest
Event Dates: 2018-07-01 - 2018-09-05
ISBN: 978-1-5386-6606-7, 978-1-5386-6605-0
Last Modified: 06 May 2024 07:44
Date Deposited: 10 Oct 2018 08:50
Full Text Link:
Related URLs: https://ieeexpl ... ocument/8473864 (Publisher URL)
PURE Output Type: Conference contribution
Published Date: 2018-09-27
Accepted Date: 2018-07-01
Authors: Watson, Scott
Gwyn, Steffan
Viola, Shaun
Slight, Thomas J.
Stanczyk, Szymon
Grzanka, Szymon
Yadav, Amit (ORCID Profile 0000-0001-7865-6905)
Rowe, Duncan
Laycock, Leslie
Docherty, Kevin E.
Rafailov, Edik U. (ORCID Profile 0000-0002-4152-0120)
Perlin, Piotr
Najda, Stephen P.
Leszczyński, Mike
Kelly, Anthony



Version: Accepted Version

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