Investigation of the Chromatic Dispersion in Two-Section InAs/GaAs Quantum-Dot Lasers


We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm (ground state) and 1160 nm (excited state) from the analysis of their subthreshold emission spectra. Measurements from devices with various lengths allow us to deduce that the group velocity dispersion is as high as 2270 fs2mm−1 and is mainly due to the dispersion of bulk GaAs. The gain-induced dispersion varies with the injected current at a rate of ≃−2 fs2 mA−1mm−1, whereas the effect of a saturable absorber on the dispersion is found to be negligible. These results suggest that the implementation of integrated dispersion compensation could significantly reduce the pulse duration of these lasers in mode-locked regime and lead to an enhancement of the formation of optical frequency combs in these devices.

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Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Funding: Swiss National Science Foundation.
Uncontrolled Keywords: Semiconductor lasers,quantum dots,mode locked lasers,dispersion curves
Publication ISSN: 1941-0174
Last Modified: 13 Mar 2024 08:14
Date Deposited: 01 Dec 2017 11:30
Full Text Link: http://ieeexplo ... cument/8090879/
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PURE Output Type: Article
Published Date: 2017-12-15
Accepted Date: 2017-10-27
Authors: Bidaux, Yves
Fedorova, Ksenia A. (ORCID Profile 0000-0002-2765-9951)
Livshits, Daniil A.
Rafailov, Edik U. (ORCID Profile 0000-0002-4152-0120)
Faist, Jerome



Version: Accepted Version

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