InGaN/GaN Laser Diodes with High Order Notched Gratings

Abstract

We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

Publication DOI: https://doi.org/10.1109/LPT.2017.2759903
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: Copyright: IEEE
Uncontrolled Keywords: Distributed feedback laser diodes,GaN,InGaN,Lateral grating,Notched grating,Semiconductor lasers,Sidewall grating,Slotted laser,Electronic, Optical and Magnetic Materials,Atomic and Molecular Physics, and Optics,Electrical and Electronic Engineering
Publication ISSN: 1941-0174
Last Modified: 10 Jun 2024 07:23
Date Deposited: 23 Oct 2017 07:50
Full Text Link:
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2017-12-01
Published Online Date: 2017-10-05
Accepted Date: 2017-10-05
Authors: Slight, Thomas J.
Yadav, Amit (ORCID Profile 0000-0001-7865-6905)
Odedina, Opeoluwa
Meredith, Wyn
Docherty, Kevin E.
Rafailov, Edik (ORCID Profile 0000-0002-4152-0120)
Kelly, Anthony E.

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