Slight, Thomas J., Yadav, Amit, Odedina, Opeoluwa, Meredith, Wyn, Docherty, Kevin E., Rafailov, Edik and Kelly, Anthony E. (2017). InGaN/GaN Laser Diodes with High Order Notched Gratings. IEEE Photonics Technology Letters, 29 (3), pp. 2020-2022.
Abstract
We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.
| Publication DOI: | https://doi.org/10.1109/LPT.2017.2759903 |
|---|---|
| Divisions: | College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT) |
| Additional Information: | Copyright: IEEE |
| Uncontrolled Keywords: | Distributed feedback laser diodes,GaN,InGaN,Lateral grating,Notched grating,Semiconductor lasers,Sidewall grating,Slotted laser,Electronic, Optical and Magnetic Materials,Atomic and Molecular Physics, and Optics,Electrical and Electronic Engineering |
| Publication ISSN: | 1941-0174 |
| Last Modified: | 20 Nov 2024 08:10 |
| Date Deposited: | 23 Oct 2017 07:50 |
| Full Text Link: | |
| Related URLs: |
http://www.scop ... tnerID=8YFLogxK
(Scopus URL) |
PURE Output Type: | Article |
| Published Date: | 2017-12-01 |
| Published Online Date: | 2017-10-05 |
| Accepted Date: | 2017-10-05 |
| Authors: |
Slight, Thomas J.
Yadav, Amit ( 
0000-0001-7865-6905)
Odedina, Opeoluwa Meredith, Wyn Docherty, Kevin E. Rafailov, Edik (
0000-0002-4152-0120)
Kelly, Anthony E. |
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)