The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer


Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > Aston Institute of Materials Research (AIMR)
Additional Information: © 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International Funding: EU H2020 Project (No. 734578)
Uncontrolled Keywords: bismuth titanate,ferroelectrics,sputtering,thin films,ZnO,Materials Science(all),Condensed Matter Physics,Mechanics of Materials,Mechanical Engineering
Publication ISSN: 1873-4979
Last Modified: 08 Jan 2024 08:26
Date Deposited: 25 Jul 2017 09:55
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2017-11-01
Published Online Date: 2017-06-27
Accepted Date: 2017-06-26
Submitted Date: 2017-05-31
Authors: Coathup, David
Li, Zheng
Zhu, Xiaojing
Ye, Haitao (ORCID Profile 0000-0002-4005-4922)

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