Coathup, David, Li, Zheng, Zhu, Xiaojing and Ye, Haitao (2017). The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer. Materials Letters, 206 , pp. 117-120.
Abstract
Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.
Publication DOI: | https://doi.org/10.1016/j.matlet.2017.06.112 |
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Divisions: | College of Engineering & Physical Sciences > Aston Institute of Materials Research (AIMR) |
Additional Information: | © 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ Funding: EU H2020 Project (No. 734578) |
Uncontrolled Keywords: | bismuth titanate,ferroelectrics,sputtering,thin films,ZnO,General Materials Science,Condensed Matter Physics,Mechanics of Materials,Mechanical Engineering |
Publication ISSN: | 1873-4979 |
Last Modified: | 06 Aug 2024 07:41 |
Date Deposited: | 25 Jul 2017 09:55 |
Full Text Link: | |
Related URLs: |
http://www.scop ... tnerID=8YFLogxK
(Scopus URL) |
PURE Output Type: | Article |
Published Date: | 2017-11-01 |
Published Online Date: | 2017-06-27 |
Accepted Date: | 2017-06-26 |
Submitted Date: | 2017-05-31 |
Authors: |
Coathup, David
Li, Zheng Zhu, Xiaojing Ye, Haitao ( ![]() |
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