Stealth dicing of sapphire wafers with near infra-red femtosecond pulses


The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: © The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Publication ISSN: 1432-0630
Last Modified: 29 Nov 2023 11:33
Date Deposited: 15 May 2017 12:55
Full Text Link: 10.1007/s00339-017-0927-0
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2017-05
Published Online Date: 2017-04-25
Accepted Date: 2017-03-23
Submitted Date: 2016-12-05
Authors: Yadav, Amit
Kbashi, Hani
Kolpakov, Stanislav
Gordon, Neil
Zhou, Kaiming
Rafailov, Edik U.



Version: Published Version

License: Creative Commons Attribution

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