Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon


The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

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Divisions: College of Engineering & Physical Sciences > Systems analytics research institute (SARI)
Additional Information: © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. Funding: EPSRC (EP/K503873/1)
Uncontrolled Keywords: Atomic and Molecular Physics, and Optics
Publication ISSN: 1539-4794
Last Modified: 19 Jan 2024 08:06
Date Deposited: 26 Oct 2015 10:55
Full Text Link: https://www.osa ... i=ol-40-16-3889
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2015-08-13
Authors: He, Wei
Zakar, Ammar
Roger, Thomas
Yurkevich, Igor V. (ORCID Profile 0000-0003-1447-8913)
Kaplan, Andre



Version: Accepted Version

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