Direct laser writing of a channel waveguide in Al2O3:Nd thin film


The femtosecond laser modification of refractive index in amorphous Al2O3:Nd thin film prepared by rf magnetron sputtering is investigated. Modifications of the refractive index in a sample with a single Al2O3:Nd layer and in a sample composed of the Al2O3:Nd layer and SiO2 layer on the top were compared. Advantages arising from addition of the SiO2 layer are shown. The film was patterned in order to form an active waveguide. Waveguide loss and mode composition were investigated experimentally and theoretically. Spectrum and kinetics of luminescence in the region of 1.06 μm were measured.

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Additional Information: Copyright 2015 Japan Laser Processing Society. This paper was published in Journal of Laser Micro Nanoengineering and is made available as an electronic reprint with permission of JLPS. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Uncontrolled Keywords: amorphous aluminum oxide,femtosecond laser direct writing,thin film,waveguide,Industrial and Manufacturing Engineering,Instrumentation,Electrical and Electronic Engineering
Last Modified: 05 Jan 2024 08:12
Date Deposited: 26 Aug 2015 20:36
Full Text Link: http://www.jlps ... /jlmn/index.php
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2015-05
Authors: Okhrimchuk, Andrey G. (ORCID Profile 0000-0001-7837-158X)
Krikunov, Alexey I.
Obod, Yurii A.
Volpian, Oleg D.



Version: Accepted Version

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