Microwave properties of an inhomogeneous optically illuminated plasma in a microstrip gap


The optical illumination of a microstrip gap on a thick semiconductor substrate creates an inhomogeneous electron-hole plasma in the gap region. This allows the study of the propagation mechanism through the plasma region. This paper uses a multilayer plasma model to explain the origin of high losses in such structures. Measured results are shown up to 50 GHz and show good agreement with the simulated multilayer model. The model also allows the estimation of certain key parameters of the plasma, such as carrier density and diffusion length, which are difficult to measure by direct means. The detailed model validation performed here will enable the design of more complex microwave structures based on this architecture. While this paper focuses on monocrystalline silicon as the substrate, the model is easily adaptable to other semiconductor materials such as GaAs.

Publication DOI: https://doi.org/10.1109/TMTT.2014.2387276
Divisions: College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Funding: EPSRC
Uncontrolled Keywords: microwave photonics,plasmas,propagation in complex media,RF microwave photonic devices,silicon,Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Publication ISSN: 1557-9670
Last Modified: 16 Feb 2024 08:07
Date Deposited: 25 Feb 2015 10:10
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2015-02
Published Online Date: 2015-01-19
Authors: Gamlath, Chris D.
Benton, David M. (ORCID Profile 0000-0003-0663-1404)
Cryan, Martin J.



Version: Accepted Version

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