Mode locking of semiconductor laser with curved waveguide and passive mode expander

Abstract

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Publication DOI: https://doi.org/10.1063/1.1539277
Divisions: College of Engineering & Physical Sciences > School of Informatics and Digital Engineering > Electrical and Electronic Engineering
College of Engineering & Physical Sciences > Aston Institute of Photonics Technology (AIPT)
Additional Information: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 82, 322 (2003) and may be found at https://doi.org/10.1063/1.1539277
Uncontrolled Keywords: mode locking,semiconductor lasers,laser resonators,linewidths,reflectivity
Publication ISSN: 1077-3118
Full Text Link:
Related URLs: http://scitatio ... .1063/1.1539277 (Publisher URL)
PURE Output Type: Article
Published Date: 2003-01-20
Published Online Date: 2003-01-12
Authors: Williamson, C.A.
Adams, M.J.
Ellis, A.D. (ORCID Profile 0000-0002-0417-0547)
Borghesani, A.

Download

[img]

Version: Published Version

| Preview

Export / Share Citation


Statistics

Additional statistics for this record