Increasing the fracture toughness of silicon by ion implantation


Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > School of Engineering and Technology > Mechanical, Biomedical & Design
College of Engineering & Physical Sciences
Additional Information: © 2003 Elsevier Science B.V. All rights reserved
Uncontrolled Keywords: fracture mechanics,implantation,radiation effects,silicone
Publication ISSN: 0168-583X
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
https://www.sci ... 8656?via%3Dihub (Publisher URL)
PURE Output Type: Article
Published Date: 2003-05
Authors: Swadener, J.G. (ORCID Profile 0000-0001-5493-3461)
Nastasi, M.

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