Faster radial strain relaxation in InAs-GaAs core-shell heterowires


The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.

Publication DOI:
Divisions: College of Engineering & Physical Sciences > School of Engineering and Technology > Mechanical, Biomedical & Design
College of Engineering & Physical Sciences
Additional Information: Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Kavanagh, K, Saveliev, I, Blumin, M, Ruda, H & Swadener, G 2012, 'Faster radial strain relaxation in InAs-GaAs core-shell heterowires', Journal of applied physics, vol 111, no. 4. and may be found at
Uncontrolled Keywords: strain,nanowires,dislocations,III-V semiconductors
Publication ISSN: 1089-7550
Last Modified: 03 Apr 2024 07:08
Date Deposited: 18 Apr 2012 09:27
Full Text Link: http://jap.aip. ... 1/i4/p044301_s1
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2012-02-17
Authors: Kavanagh, K.L.
Saveliev, I.
Blumin, M.
Ruda, H.E.
Swadener, G. (ORCID Profile 0000-0001-5493-3461)



Version: Published Version

Export / Share Citation


Additional statistics for this record