MOS based nanocapacitor using C-AFM

Hill, Daniel, Sadewasser, Sascha and Aymerich, Xavier (2003). MOS based nanocapacitor using C-AFM. Proceedings of SPIE - The International Society for Optical Engineering, 5118 , pp. 507-514.


Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

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Divisions: Engineering & Applied Sciences > Aston Institute of Photonics Technology
Additional Information: Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Uncontrolled Keywords: AFM,Nanodevices,Nanofabrication,SPM,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Computer Science Applications,Applied Mathematics,Electrical and Electronic Engineering
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
https://www.spi ... /12.498556.full (Publisher URL)
Published Date: 2003-04-29
Authors: Hill, Daniel ( 0000-0003-3510-7783)
Sadewasser, Sascha
Aymerich, Xavier



Version: Published Version

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