MOS based nanocapacitor using C-AFM

Hill, Daniel, Sadewasser, Sascha and Aymerich, Xavier (2003). MOS based nanocapacitor using C-AFM. Proceedings of SPIE - The International Society for Optical Engineering, 5118 , pp. 507-514.

Abstract

Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

Publication DOI: https://doi.org/10.1117/12.498556
Divisions: Engineering & Applied Sciences > Aston Institute of Photonics Technology
Additional Information: Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Uncontrolled Keywords: AFM,Nanodevices,Nanofabrication,SPM,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Computer Science Applications,Applied Mathematics,Electrical and Electronic Engineering
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
https://www.spi ... /12.498556.full (Publisher URL)
Published Date: 2003-04-29
Authors: Hill, Daniel ( 0000-0003-3510-7783)
Sadewasser, Sascha
Aymerich, Xavier

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