Increasing the fracture toughness of silicon by ion implantation

Swadener, J.G. and Nastasi, M. (2003). Increasing the fracture toughness of silicon by ion implantation. Nuclear Instruments and Methods in Physics Research: Section B, 206 , pp. 937-940.

Abstract

Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

Publication DOI: https://doi.org/10.1016/S0168-583X(03)00865-6
Divisions: Engineering & Applied Sciences > Mechanical engineering & design
Engineering & Applied Sciences
Additional Information: 13th International Conference on Ion Beam Modification of Materials
Uncontrolled Keywords: fracture mechanics,implantation,radiation effects,silicone
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Related URLs: http://www.scopus.com/inward/record.url?scp=0038581184&partnerID=8YFLogxK (Scopus URL)
Published Date: 2003-05
Authors: Swadener, J.G. ( 0000-0001-5493-3461)
Nastasi, M.

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