Slight, Thomas J., Yadav, Amit, Odedina, Opeoluwa, Meredith, Wyn, Docherty, Kevin E., Rafailov, Edik and Kelly, Anthony E. (2017). InGaN/GaN Laser Diodes with High Order Notched Gratings. IEEE Photonics Technology Letters (99),
Abstract
We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.
| Publication DOI: | https://doi.org/10.1109/LPT.2017.2759903 |
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| Divisions: | Engineering & Applied Sciences > Electrical, Electronic & Power Engineering Engineering & Applied Sciences > Aston Institute of Photonics Technology |
| Additional Information: | Copyright: IEEE |
| Uncontrolled Keywords: | Distributed feedback laser diodes,GaN,InGaN,Lateral grating,Notched grating,Semiconductor lasers,Sidewall grating,Slotted laser,Electronic, Optical and Magnetic Materials,Atomic and Molecular Physics, and Optics,Electrical and Electronic Engineering |
| Full Text Link: | |
| Related URLs: |
http://www.scop ... tnerID=8YFLogxK
(Scopus URL) |
PURE Output Type: | Article |
| Published Date: | 2017-10-05 |
| Published Online Date: | 2017-10-05 |
| Accepted Date: | 2017-10-05 |
| Authors: |
Slight, Thomas J.
Yadav, Amit Odedina, Opeoluwa Meredith, Wyn Docherty, Kevin E. Rafailov, Edik ( .gif)
0000-0002-4152-0120)
Kelly, Anthony E. |
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