Titanium dioxide engineered for near-dispersionless high terahertz permittivity and ultra-low-loss

Yu, Chuying, Zeng, Yang, Yang, Bin, Donnan, Robert, Huang, Jinbao, Xiong, Zhaoxian, Mahajan, Amit, Shi, Baogui, Ye, Haitao, Binions, Russell, Tarakina, Nadezda V., Reece, Mike J. and Yan, Haixue (2017). Titanium dioxide engineered for near-dispersionless high terahertz permittivity and ultra-low-loss. Scientific Reports, 7 (1),

Abstract

Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2-0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.

Publication DOI: https://doi.org/10.1038/s41598-017-07019-9
Divisions: Engineering & Applied Sciences > Electrical, Electronic & Power Engineering
Engineering & Applied Sciences > Aston Institute of Materials Research (AIMR)
Additional Information: © The Authors 2017. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. Funding: EPSRC Teranet fund (EP/M00306X/1); and a scholarship from China Scholarship Council.
Uncontrolled Keywords: General
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Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2017-12
Authors: Yu, Chuying
Zeng, Yang
Yang, Bin
Donnan, Robert
Huang, Jinbao
Xiong, Zhaoxian
Mahajan, Amit
Shi, Baogui
Ye, Haitao ( 0000-0002-4005-4922)
Binions, Russell
Tarakina, Nadezda V.
Reece, Mike J.
Yan, Haixue

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