Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Abstract

The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Publication DOI: https://doi.org/10.1007/s00339-017-0927-0
Divisions: Engineering & Applied Sciences > Electrical, Electronic & Power Engineering
Engineering & Applied Sciences > Aston Institute of Photonics Technology
Additional Information: © The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Uncontrolled Keywords: Chemistry(all),Materials Science(all)
Full Text Link:
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2017-05
Published Online Date: 2017-04-25
Accepted Date: 2017-03-23
Submitted Date: 2016-12-05
Authors: Yadav, Amit
Kbashi, Hani
Kolpakov, Stanislav ( 0000-0001-6947-8289)
Gordon, Neil ( 0000-0002-1474-9739)
Zhou, Kaiming ( 0000-0002-6011-1912)
Rafailov, Edik U. ( 0000-0002-4152-0120)

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