Properties of ultra fast deposited diamond-like hydrogenated carbon films

Sullivan, J.L., Saied, S.O. and Zaharia, T. (2011). Properties of ultra fast deposited diamond-like hydrogenated carbon films. Acta Physica Polonica A, 120 (1), pp. 156-162.


Hydrogenated amorphous carbon films with diamond like structures have been formed on different substrates at very low energies and temperatures by a plasma enhanced chemical vapor deposition process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with Ar as carrier gas. The films were grown at very high deposition rates. Deposition on Si, glass and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness, adhesion and optical properties. Deposition rates up to 20 nm/s have been achieved at substrate temperatures below 100°C. The typical sp3 content of 60-75% in the films was determined by X-ray generated Auger electron spectroscopy. Hardness, reduced modulus and adhesion were measured using a MicroMaterials Nano Test Indenter/Scratch tester. Hardness was found to vary from 4 to 13 GPa depending on deposition conditions. Adhesion was significantly influenced by the substrate temperature and in situ DC cleaning. Hydrogen content in the film was measured by a combination of the Fourier transform infrared and Rutherford backscattering techniques. Advantages of these films are: low ion energy and deposition temperature, very high deposition rates, low capital cost of the equipment and the possibility of film properties being tailored according to the desired application.

Publication DOI:
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Additional Information: Proceedings of the VIII International Conference ION 2010, Kazimierz Dolny, Poland, June 14–17, 2010
Uncontrolled Keywords: Physics and Astronomy(all)
Full Text Link: http://przyrbwn ... 0/a120z1p40.pdf
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2011-07
Authors: Sullivan, J.L.
Saied, S.O.
Zaharia, T.

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