Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Zulonas, Modestas, Titkov, Ilya E., Yadav, Amit, Fedorova, Ksenia a., Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Meredith, Wyn, Rafailov, Edik U. and Slight, Thomas J. (2016). Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. IN: Light-emitting diodes. Jeon, Heonsu; Tu, Li-Wei; Krames, Michael R. and Strassburg, Martin (eds) SPIE proceedings . GBR: SPIE.

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Publication DOI: https://doi.org/10.1117/12.2211046
Divisions: Engineering & Applied Sciences > Electrical, Electronic & Power Engineering
Engineering & Applied Sciences > Aston Institute of Photonics Technology
Additional Information: Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046
Event Title: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Event Type: Other
Event Dates: 2016-02-15 - 2016-02-28
Uncontrolled Keywords: capacitance-voltage,epi layer,light emitting diode,magnesium,MOCVD,P-GaN,Applied Mathematics,Computer Science Applications,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Condensed Matter Physics
Full Text Link: http://proceedi ... ticleid=2502323
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2016-03-08
Authors: Zulonas, Modestas
Titkov, Ilya E.
Yadav, Amit
Fedorova, Ksenia a. ( 0000-0002-2765-9951)
Tsatsulnikov, Andrey F.
Lundin, Wsevolod V.
Sakharov, Alexey V.
Meredith, Wyn
Rafailov, Edik U. ( 0000-0002-4152-0120)
Slight, Thomas J.

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