Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

Abstract

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

Publication DOI: https://doi.org/10.1364/OL.40.003889
Divisions: Engineering & Applied Sciences > Mathematics
Engineering & Applied Sciences > Systems analytics research institute (SARI)
Additional Information: © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. Funding: EPSRC (EP/K503873/1)
Uncontrolled Keywords: Atomic and Molecular Physics, and Optics
Full Text Link: https://www.osa ... i=ol-40-16-3889
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
PURE Output Type: Article
Published Date: 2015-08-13
Authors: He, Wei
Zakar, Ammar
Roger, Thomas
Yurkevich, Igor V. ( 0000-0003-1447-8913)
Kaplan, Andre

Download

[img]

Version: Accepted Version


Export / Share Citation


Statistics

Additional statistics for this record