Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

He, Wei, Zakar, Ammar, Roger, Thomas, Yurkevich, Igor V. and Kaplan, Andre (2015). Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon. Optics Letters, 40 (16), pp. 3889-3892.

Abstract

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

Publication DOI: https://doi.org/10.1364/OL.40.003889
Divisions: Engineering & Applied Sciences > Mathematics
Engineering & Applied Sciences > Systems analytics research institute (SARI)
Additional Information: © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. Funding: EPSRC (EP/K503873/1)
Uncontrolled Keywords: Atomic and Molecular Physics, and Optics
Full Text Link: https://www.osa ... i=ol-40-16-3889
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2015-08-13
Authors: He, Wei
Zakar, Ammar
Roger, Thomas
Yurkevich, Igor V. ( 0000-0003-1447-8913)
Kaplan, Andre

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