Mode locking of semiconductor laser with curved waveguide and passive mode expander


Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Publication DOI:
Divisions: Engineering & Applied Sciences > Electrical, Electronic & Power Engineering
Engineering & Applied Sciences > Aston Institute of Photonics Technology
Additional Information: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 82, 322 (2003) and may be found at
Uncontrolled Keywords: mode locking,semiconductor lasers,laser resonators,linewidths,reflectivity
Full Text Link:
Related URLs: http://scitatio ... .1063/1.1539277 (Publisher URL)
Published Date: 2003-01-20
Authors: Williamson, C.A.
Adams, M.J.
Ellis, A.D. ( 0000-0002-0417-0547)
Borghesani, A.



Version: Published Version

| Preview

Export / Share Citation


Additional statistics for this record