Spectrally-controlled, gain-switched operation of InGaN diode laser

Hu, Y., Dubov, M. and Khrushchev, I. (2004). Spectrally-controlled, gain-switched operation of InGaN diode laser. Electronics letters, 40 (11), pp. 702-703.


Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

Publication DOI: https://doi.org/10.1049/el:20040443
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Engineering & Applied Sciences > Institute of Photonics
Uncontrolled Keywords: biochemical engineering,gallium nitride,infrared radiation,laser pulses,semiconductor lasers,semiconductor quantum wells,spectroscopic analysis,blazing,feedback signals,pulse duration,radio frequency
Full Text Link: http://mr.cross ... 2Fel%3A20040443
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2004-05-27
Authors: Hu, Y.
Dubov, M. ( 0000-0002-6764-683X)
Khrushchev, I.

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