Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

Mottahedeh, R., Prescott, D., Haywood, S.K., Pattison, David A., Kean, P.N., Bennion, Ian, Hopkinson, M., Pate, M. and Hart, L. (1998). Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. Journal of Applied Physics, 83 (1), pp. 306-309.

Abstract

The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

Publication DOI: https://doi.org/10.1063/1.366684
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Uncontrolled Keywords: indium compounds,gallium arsenide,III-V semiconductors,carrier lifetime,excitons,optical saturable absorption,semiconductor quantum wells,time resolved spectra,thermionic emission,Physics and Astronomy(all),Physics and Astronomy (miscellaneous)
Full Text Link: http://scitatio ... 0.1063/1.366684
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 1998-01
Authors: Mottahedeh, R.
Prescott, D.
Haywood, S.K.
Pattison, David A.
Kean, P.N.
Bennion, Ian
Hopkinson, M.
Pate, M.
Hart, L.

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