The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

Coathup, David, Li, Zheng, Zhu, Xiaojing and Ye, Haitao (2017). The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer. Materials Letters, 206 , pp. 117-120.

Abstract

Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.

Publication DOI: https://doi.org/10.1016/j.matlet.2017.06.112
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Engineering & Applied Sciences > Nanoscience research group
Additional Information: © 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ Funding: EU H2020 Project (No. 734578)
Uncontrolled Keywords: bismuth titanate,ferroelectrics,sputtering,thin films,ZnO,Materials Science(all),Condensed Matter Physics,Mechanics of Materials,Mechanical Engineering
Full Text Link: http://www.scopus.com/inward/record.url?scp=85021749576&partnerID=8YFLogxK
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Published Date: 2017-11-01
Authors: Coathup, David
Li, Zheng
Zhu, Xiaojing
Ye, Haitao

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