Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Yadav, Amit; Kbashi, Hani; Kolpakov, Stanislav; Gordon, Neil; Zhou, Kaiming and Rafailov, Edik U. Stealth dicing of sapphire wafers with near infra-red femtosecond pulses. Applied Physics A, 123 (5),

Abstract

The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Publication DOI: https://doi.org/10.1007/s00339-017-0927-0
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Engineering & Applied Sciences > Institute of Photonics
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Additional Information: © The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Uncontrolled Keywords: Chemistry(all),Materials Science(all)

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