Broadly tunable dual-wavelength InAs/GaAs quantum-dot laser for THz generation

Fedorova, Ksenia A.; Gorodetsky, Andrei A.; Livshits, Daniil A.; Maleev, Nikolai A.; Blokhin, Sergei A.; Soboleva, Ksenia K.; Ustinov, Victor M. and Rafailov, Edik U. (2016). Broadly tunable dual-wavelength InAs/GaAs quantum-dot laser for THz generation. IN: Proceedings : 2016 International Conference Laser Optics. IEEE.

Abstract

We demonstrate an ultra-compact, room-Temperature, continuous-wave, broadly-Tunable dual-wavelength InAs/GaAs quantum-dot external-cavity diode laser in the spectral region between 1150 nm and 1301 nm with maximum output power of 280 mW. This laser source generating two modes with tunable difference-frequency (300 GHz-30 THz) has a great potential to replace commonly used bulky lasers for THz generation in photomixer devices.

Publication DOI: https://doi.org/10.1109/LO.2016.7549736
Divisions: Engineering & Applied Sciences > Institute of Photonics
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Event Title: 2016 International Conference Laser Optics
Event Type: Other
Event Dates: 2016-06-27 - 2016-07-01
Uncontrolled Keywords: quantum dot lasers,THz generation,tunable lasers,Electronic, Optical and Magnetic Materials,Atomic and Molecular Physics, and Optics
Published Date: 2016-08-23

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