Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Shi, Y., Liu, B., Liu, L., Meyer III, H.M., Payzant, E.A., Walker, L.R., Evans, N.D., Swadener, Greg, Chaudhuri, J. and Chaudhuri, Joy (2001). Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate. Physica Status Solidi A, 188 (2), pp. 757-762.

Abstract

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

Publication DOI: https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S
Divisions: Engineering & Applied Sciences > Mechanical engineering & design
Engineering & Applied Sciences
Additional Information: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.
Uncontrolled Keywords: 61.10.Nz,68.37.Hk,Hk; 68.37.Ps,81.05.Ea,81.15.Gh,S7.14
Full Text Link: http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200112%29188:2%3C757::AID-PSSA757%3E3.0.CO;2-S/abstract;jsessionid=E12CF5B829F724DF694AF27ED32EF7F4.f04t04
Related URLs: http://www.scopus.com/inward/record.url?scp=18044403846&partnerID=8YFLogxK (Scopus URL)
Published Date: 2001-12
Authors: Shi, Y.
Liu, B.
Liu, L.
Meyer III, H.M.
Payzant, E.A.
Walker, L.R.
Evans, N.D.
Swadener, Greg ( 0000-0001-5493-3461)
Chaudhuri, J.
Chaudhuri, Joy

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