Stress-induced platelet formation in silicon:a molecular dynamics study

Swadener, J.G., Baskes, M.I. and Nastasi, M. (2005). Stress-induced platelet formation in silicon:a molecular dynamics study. Physical Review B, 72 (20),

Abstract

The effect of stress on vacancy cluster configurations in silicon is examined using molecular dynamics. At zero pressure, the shape and stability of the vacancy clusters agrees with previous atomistic results. When stress is applied the orientation of small planar clusters changes to reduce the strain energy. The preferred orientation for the vacancy clusters under stress agrees with the experimentally observed orientations of hydrogen platelets in the high stress regions of hydrogen implanted silicon. These results suggest a theory for hydrogen platelet formation.

Publication DOI: https://doi.org/10.1103/PhysRevB.72.201202
Divisions: Engineering & Applied Sciences > Mechanical engineering & design
Engineering & Applied Sciences
Additional Information: ©2005 American Physical Society. Stress-induced platelet formation in silicon: A molecular dynamics study J. G. Swadener, M. I. Baskes, and M. Nastasi Phys. Rev. B 72, 201202(R) – Published 30 November 2005
Full Text Link:
Related URLs: http://www.scopus.com/inward/record.url?scp=29744433637&partnerID=8YFLogxK (Scopus URL)
http://link.aps.org/pdf/10.1103/PhysRevB.72.201202 (Publisher URL)
Published Date: 2005-11-30
Authors: Swadener, J.G. ( 0000-0001-5493-3461)
Baskes, M.I.
Nastasi, M.

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