Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

Fedorova, Ksenia A.; Cataluna, Maria A.; Kudryashov, Igor; Khalfin, Victor and Rafailov, Edik U. Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser. IEEE Photonics Technology Letters, 22 (16), pp. 1205-1207.

Abstract

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Publication DOI: https://doi.org/10.1109/LPT.2010.2051661
Divisions: Engineering & Applied Sciences > Institute of Photonics
Uncontrolled Keywords: quantum-well (QW) lasers,emiconductor lasers

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