Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

Mottahedeh, R; Haywood, S K; Pattison, D A; Kean, P N; Bennion, I; Hopkinson, M; Prescott, D and Pate, M. (1996). Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. IN: 9th IEEE Lasers and Electro-Optics Society Annual Meeting. UNSPECIFIED.
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Event Title: 9th IEEE Lasers and Electro-Optics Society Annual Meeting
Event Type: Other
Event Dates: 1996-11-18 - 1996-11-21
Uncontrolled Keywords: III-V semiconductors,X-ray diffraction,excitons,gallium arsenide,indium compounds,k.p calculations,molecular beam epitaxial growth,optical saturable absorption,semiconductor heterojunctions,semiconductor quantum wells
Published Date: 1996-11

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