Self-seeded gain-switched operation of an InGaN MQW laser diode

Hu, Youfang, Dubov, Mykhaylo and Khrushchev, Igor (2004). Self-seeded gain-switched operation of an InGaN MQW laser diode. IN: Semiconductor lasers and laser dynamics. Lenstra, Daan; Morthier, Geert; Erneux, Thomas and Pessa, Markus (eds) SPIE proceedings . SPIE.

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Publication DOI: https://doi.org/10.1117/12.545446
Divisions: Engineering & Applied Sciences > Electrical, electronic & power engineering
Engineering & Applied Sciences > Institute of Photonics
Additional Information: Youfang Hu ; Michael Dubov and Igor Khrushchev, "Self-seeded gain-switched operation of an InGaN MQW laser diode", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, 625 (September 1, 2004); doi:10.1117/12.545446. Copyright 2004 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. http://dx.doi.org/10.1117/12.545446
Event Title: Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004)
Event Type: Other
Event Dates: 2004-04-27
Uncontrolled Keywords: electric currents,gain control,resonance,semiconducting gallium arsenide,semiconducting indium compounds,semiconductor quantum wells,signal,external cavity,gain switching,InGaN,self seeding,Electrical and Electronic Engineering,Condensed Matter Physics
Full Text Link: http://proceedi ... rticleid=845687
Related URLs: http://www.scop ... tnerID=8YFLogxK (Scopus URL)
Published Date: 2004-09-03
Authors: Hu, Youfang
Dubov, Mykhaylo ( 0000-0002-6764-683X)
Khrushchev, Igor

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