Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

Shao, Lin, Wang, Y.Q., Swadener, J. Greg, Nastasi, M., Thompson, Phillip E. and Theodore, N. David (2008). Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures. Applied Physics Letters, 92 (6), 061904.


We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

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Divisions: Engineering & Applied Sciences > Mechanical engineering & design
Engineering & Applied Sciences
Additional Information: Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at
Uncontrolled Keywords: buried layers,channelling,cracks,elemental semiconductors,Ge-Si alloys,ion beam effects,ion implantation,Rutherford backscattering,semiconductor heterojunctions,silicon,stress relaxation,Physics and Astronomy (miscellaneous)
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Published Date: 2008-02-11
Authors: Shao, Lin
Wang, Y.Q.
Swadener, J. Greg ( 0000-0001-5493-3461)
Nastasi, M.
Thompson, Phillip E.
Theodore, N. David



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